Doping of semiconductor nanostructures is key for the realization of any kind of devices. However the incorporation of dopants in the crystalline matrix of nanostructures is challenging. In the case of nanowires, the incorporation mechanism is debated between:
- From the catalyst droplet
- From the facets
We found that the two extreme mechanisms can be controlled throught the silicon flux and the nanowire growth rate.
Appl. Phys. Lett. 95, 023119 (2010)
Nanolett. 10, 1799 (2010)
Nanolett. 10, 1734 (2010)
Funding: Swiss National Science Foundation